Substrate treating apparatus and substrate treating method

ABSTRACT

Provided is an apparatus for treating a substrate including: a processing vessel having a processing space; a support unit for supporting the substrate in the processing space and rotating the substrate; a liquid supply unit for supplying a processing liquid to the substrate; and a heating unit for heating the substrate, wherein the support unit includes: a spin chuck; a rotation driver for rotating the spin chuck; a chuck pin installed on the spin chuck to be rotated together with the spin chuck; a chuck pin moving unit for moving the chuck pin between a contact position wherein the chuck pin is in contact with a side portion of the substrate and an open position at which the chuck pin is spaced apart from the side portion of the substrate, and the chuck pin moving unit moves the chuck pin while the substrate is being rotated by the spin chuck.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to and the benefit of Korean PatentApplication No. 10-2021-0136382 filed in the Korean IntellectualProperty Office on Oct. 14, 2021, the entire contents of which areincorporated herein by reference.

TECHNICAL FIELD

The present invention relates to a substrate treating apparatus and asubstrate treating method.

BACKGROUND ART

In order to manufacture a semiconductor device or a liquid crystaldisplay, various processes, such as photography, ashing, ionimplantation, thin film deposition, and cleaning, performed on asubstrate. Among them, the etching process or the cleaning process is aprocess of removing unnecessary regions of a thin film formed on asubstrate, or etching or cleaning foreign substances, particles, and thelike, and requires high selectivity, high etch rate, and etch uniformityfor the thin film, and as semiconductor devices are highly integrated,higher levels of etch selectivity and etch uniformity are required.

In general, in the etching process or cleaning process of the substrate,a processing liquid treatment operation, a rinse treatment operation,and a drying treatment operation are sequentially performed. In oneexample, in the processing liquid treatment operation, a processingliquid for etching the thin film formed on the substrate or removingforeign substances on the substrate is supplied to the substrate to forma puddle, and then the puddle of the processing liquid is heated topromote the etching by the processing liquid, and in the rinse treatmentoperation, a rinse liquid, such as pure water, is supplied onto thesubstrate.

The above-described processing liquid treatment operation is performedby placing the substrate on a support unit and supplying the processingliquid onto the substrate while rotating the support unit. The supportunit is provided with chuck pins for supporting the side portion of thesubstrate to prevent the substrate from moving in the lateral directionof the support unit during rotation. The chuck pins move between astandby position that provides space for a substrate to be placed whenthe substrate is loaded or unloaded onto the support unit, and a supportposition that comes into contact with the side portion of the substrateas the process is performed while the substrate placed on the supportunit is rotated. Accordingly, the space provided between the chuck pinsplaced in the standby position is wider than the space provided betweenthe chuck pins placed in the support position.

In general, when the puddle is formed on the substrate, a problem occursin that the processing liquid flows down along the chuck pin due to thecontact between the substrate and the chuck pin. In addition, there is aproblem in that it is difficult to maintain a certain amount of liquidfilm due to the phenomenon in which the processing liquid flows downalong the chuck pin.

SUMMARY OF THE INVENTION

The present invention has been made in an effort to provide a substratetreating apparatus and a substrate treating method capable ofefficiently treating a substrate.

The present invention has also been made in an effort to provide asupport unit in which a chuck pin freely moves during a process byrotating a substrate, and a substrate treating apparatus and methodusing the same.

The object of the present invention is not limited thereto, and otherobjects not mentioned will be clearly understood by those of ordinaryskill in the art from the following description.

An exemplary embodiment of the present invention provides an apparatusfor treating a substrate, the apparatus including: a processing vesselhaving a processing space; a support unit for supporting the substratein the processing space and rotating the substrate; a liquid supply unitfor supplying a processing liquid to the substrate supported by thesupport unit; and a heating unit for heating the substrate, in which thesupport unit includes: a spin chuck; a rotation driver for rotating thespin chuck; a chuck pin installed on the spin chuck so as to be rotatedtogether with the spin chuck; and a chuck pin moving unit for moving thechuck pin between a contact position at which the chuck pin is incontact with a side portion of the substrate and an open position atwhich the chuck pin is spaced apart from the side portion of thesubstrate, and the chuck pin moving unit moves the chuck pin while thesubstrate is being rotated by the spin chuck.

The chuck pin moving unit may include: a first clutch module including afirst clutch provided to be movable in a vertical direction by a liftingdriver; and a second clutch module including a second clutch facing thefirst clutch and coupled to the chuck pin.

When the first clutch is in contact with the second clutch, the chuckpin may be moved from the contact position to the open position.

When the first clutch is spaced apart from the second clutch, the chuckpin may be located at the contact position.

The second clutch module may be rotated together with the spin chuck.

When the first clutch comes into contact with the second clutch, thefirst clutch may be rotated together with the second clutch.

The first clutch module may include: the first clutch; a fixing memberwhich is not rotated together with the spin chuck; and a bearing memberdisposed between the first clutch and the fixing member.

The bearing member may include an outer ring coupled to the fixingmember, an inner ring coupled to the first clutch, and a ball disposedbetween the outer ring and the inner ring, and when the first clutch isin contact with the second clutch, the first clutch may be rotatedtogether with the second clutch with respect to the fixing member.

An elastic member may be provided between the lifting driver and thefirst clutch.

An impact mitigating member may be disposed inside the first clutch, andthe impact mitigating member may mitigate an impact generated in arotational direction of the first clutch when the first clutch is incontact with the second clutch and is rotated together with the secondclutch.

The second clutch module may include: the second clutch; a base memberincluding a first portion having a longitudinal direction correspondingto the vertical direction, and a second portion extending from the firstportion and extending in a direction perpendicular to the longitudinaldirection of the first portion; a first moving member movably coupled tothe first portion of the base member; a second moving member coupled tothe chuck pin and movably coupled to the second portion of the basemember; and a third moving member having one end hinged to the firstmoving member and the other end hinged to the second moving member, andthe second clutch is coupled to the first moving member.

The second clutch may include: a plate portion facing the first clutch;and a pillar portion for connecting the plate and the first movingmember.

A partition wall may be disposed between the first clutch module and thesecond clutch module, and the second clutch may be located between thepartition wall and the first clutch.

A hole through which the pillar portion of the second clutch passes maybe formed in the partition wall, and a sealing member may be providedbetween an inner surface of the hole of the partition wall and thepillar portion of the second clutch.

The spin chuck may be rotated such that the substrate is rotated at afirst speed or a second speed faster than the first speed, when thesubstrate is rotated at the first speed, the first clutch may be incontact with the second clutch, and when the substrate is rotated at thesecond speed, the first clutch may be spaced apart from the secondclutch.

Another exemplary embodiment of the present invention provides a methodof treating a substrate, the method including: a first liquid supplyoperation of supplying a first liquid to a substrate rotating at a firstspeed in an open state in which a chuck pin provided for supporting aside portion of the substrate is located at an open position at whichthe chuck pin is spaced apart from the side portion of the substrate andforming a first liquid film on the substrate; a liquid film heatingoperation of heating the first liquid film formed on the substrate inthe open state, after the first liquid supply operation; and a secondliquid supply operation of supplying a second liquid to the substraterotating at a second speed faster than the first speed in a contactstate in which the chuck pin is located at a contact position at whichthe chuck pin is in contact with the side portion of the substrate tosupport the side portion of the substrate, after the liquid film heatingoperation, in which the change from the open state to the contact stateis performed while the substrate is being rotated.

The first liquid and the second liquid may be the same, and the firstliquid may be an aqueous solution of phosphoric acid.

The amount of second liquid supplied per unit time in the second liquidsupply operation may be greater than the amount of first liquid suppliedper unit time in the first liquid supply operation.

In the liquid film heating operation, the substrate may be rotated atthe first speed, and the first liquid may not be supplied onto thesubstrate.

Still another exemplary embodiment of the present invention provides amethod of treating a substrate by using the apparatus of treating thesubstrate, the method including: a first liquid supply operation ofsupplying a first liquid to a substrate rotating at a first speed in anopen state in which the chuck pin is located at the open position andforming a first liquid film on the substrate; a liquid film heatingoperation of heating the first liquid film formed on the substrate inthe open state in which the chuck pin is located at the open position,after the first liquid supply operation; and a second liquid supplyoperation of supplying a second liquid to the substrate rotating at asecond speed faster than the first speed in a contact state in which thechuck pin is located at the contact position, after the liquid filmheating operation, in which the change of the chuck pin from the openstate to the contact state is performed while the substrate is beingrotated.

According to the exemplary embodiment of the present invention, it ispossible to efficiently treat a substrate.

Further, according to the exemplary embodiment of the present invention,the chuck pin may be freely moved while the process is performed byrotating the substrate.

Further, according to the exemplary embodiment of the present invention,it is possible to prevent the processing liquid from flowing down to thechuck pin.

Further, according to the exemplary embodiment of the present invention,the processing liquid puddle formed on the substrate may be maintainedas a liquid film of a predetermined amount or more.

Further, according to the exemplary embodiment of the present invention,the chuck pin may be normally moved regardless of whether the supportunit supporting the substrate is rotated or is not rotated.

Further, according to the exemplary embodiment of the present invention,it is possible to adjust the movement stroke of the chuck pin during theprocess.

Further, according to the exemplary embodiment of the present invention,through the support unit in which a hollow space is formed, varioustypes of heat sources and cooling systems of various heat sources may beapplied.

The effect of the present invention is not limited to the foregoingeffects, and those skilled in the art may clearly understandnon-mentioned effects from the present specification and theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top plan view illustrating a substrate treating facilityaccording to an exemplary embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating a substrate treatingapparatus provided in a process chamber of FIG. 1 according to anexemplary embodiment of the present invention.

FIG. 3 is a cross-sectional view illustrating a chuck pin and a chuckpin moving unit according to the exemplary embodiment of the presentinvention.

FIG. 4 is a plan cross-sectional view illustrating a state in which animpact mitigating member is installed on a first clutch according to theexemplary embodiment of the present invention.

FIG. 5 is a diagram schematically illustrating a state in which anelastic member of a lifting driver is installed according to theexemplary embodiment of the present invention.

FIG. 6 is a cross-sectional view illustrating a second clutch moduleaccording to the exemplary embodiment of the present invention.

FIG. 7 is a diagram schematically illustrating a state in which a chuckpin is provided movably between a contact position and an open positionwhile a substrate is rotated according to the exemplary embodiment ofthe present invention.

FIG. 8 is a diagram illustrating a state of the chuck pin moving unitwhen the chuck pin is located at the open position according to theexemplary embodiment of the present invention.

FIG. 9 is a view illustrating a state of the chuck pin moving unit whenthe chuck pin is located at the contact position according to theexemplary embodiment of the present invention.

FIG. 10 is a flowchart of a substrate treating method according to anexemplary embodiment of the present invention.

FIGS. 11 to 14 are diagrams sequentially illustrating the substratetreating method of FIG. 10 .

DETAILED DESCRIPTION

Hereinafter, an exemplary embodiment of the present invention will bedescribed more fully hereinafter with reference to the accompanyingdrawings, in which exemplary embodiments of the invention areillustrated. However, the present invention can be variously implementedand is not limited to the following exemplary embodiments. In addition,in describing an exemplary embodiment of the present invention indetail, if it is determined that a detailed description of a relatedwell-known function or configuration may unnecessarily obscure the gistof the present invention, the detailed description thereof will beomitted. In addition, the same reference numerals are used throughoutthe drawings for parts having similar functions and actions.

In addition, unless explicitly described to the contrary, the word“comprise” and variations such as “comprises” or “comprising” will beunderstood to imply the inclusion of stated elements but not theexclusion of any other elements. It will be appreciated that terms“including” and “having” are intended to designate the existence ofcharacteristics, numbers, operations, operations, constituent elements,and components described in the specification or a combination thereof,and do not exclude a possibility of the existence or addition of one ormore other characteristics, numbers, operations, operations, constituentelements, and components, or a combination thereof in advance.

Singular expressions used herein include plurals expressions unless theyhave definitely opposite meanings in the context. Accordingly, shapes,sizes, and the like of the elements in the drawing may be exaggeratedfor clearer description.

An expression, “and/or” includes each of the mentioned items and all ofthe combinations including one or more of the items. Further, in thepresent specification, “connected” means not only when member A andmember B are directly connected, but also when member A and member B areindirectly connected by interposing member C between member A and memberB.

The exemplary embodiment of the present invention may be modified invarious forms, and the scope of the present invention should not beconstrued as being limited to the following exemplary embodiments. Thepresent exemplary embodiment is provided to more completely explain thepresent invention to those skilled in the art. Therefore, the shapes ofelements in the drawings are exaggerated to emphasize clearerdescriptions.

In the present exemplary embodiment, a process of etching a substrate byusing a processing liquid will be described as an example. However, thepresent exemplary embodiment is not limited to the etching process, andis variously applicable to substrate treating processes using liquids,such as a cleaning process, an ashing process, and a developing process.

Here, the substrate is a comprehensive concept including all substratesused for manufacturing semiconductor devices, Flat Panel Displays(FPDs), and other articles in which circuit patterns are formed on thinfilms. Examples of the substrate W include a silicon wafer, a glasssubstrate, and an organic substrate.

Hereinafter, an example of the present invention will be described indetail with reference to FIGS. 1 to 13 .

FIG. 1 is a top plan view illustrating a substrate treating facilityaccording to an exemplary embodiment of the present invention. Referringto FIG. 1 , the substrate treating facility 1 includes an index module10 and a process processing module 20.

The index module 10 includes a load port 120 and a transfer frame 140.The load port 120, the transfer frame 140, and the process processingmodule 20 may be sequentially arranged in series. Hereinafter, adirection in which the load port 120, the transfer frame 140, and theprocess processing module 20 are arranged is called to as a firstdirection 12, and a direction perpendicular to the first direction 12when viewed from the top is called a second direction 14, and adirection perpendicular to a plane including the first direction 12 andthe second direction 14 is called a third direction 16.

A carrier 18 in which a substrate W is accommodated is seated on theload port 120. The load port 120 is provided in plurality, and theplurality of load ports 120 is arranged in series in the seconddirection 14. The number of load ports 120 may be increased or decreasedaccording to process efficiency of the process processing module 20 anda condition of foot print, and the like. A plurality of slots (notillustrated) for accommodating the plurality of substrates W in a statewhere the substrates W are arranged horizontally with respect to theground may be formed in the carrier 18. As the carrier 18, a FrontOpening Unified Pod (FOUP) may be used.

The transfer frame 1400 transfers the substrate W between the carrier 18seated on the load port 1200 and the buffer unit 220. In the transferframe 140, an index rail 142 and an index robot 144 are provided. Alongitudinal direction of the index rail 142 is provided to be parallelto the second direction 14. The index robot 144 is installed on theindex rail 142, and linearly moves in the second direction 14 along theindex rail 142. The index robot 144 includes a base 144 a, a body 144 b,and an index arm 144 c. The base 144 a is installed to be movable alongthe index rail 142. The body 144 b is coupled to the base 144 a. Thebody 144 b is provided to be movable in the third direction 16 on thebase 144 a. Further, the body 144 b is provided to be rotatable on thebase 144 a. The index arm 144 c is coupled to the body 144 b and isprovided to be movable forwardly and backwardly with respect to the body144 b. A plurality of index arms 144 c is provided to be individuallydriven. The index arms 144 c are disposed to be stacked in the state ofbeing spaced apart from each other in the third direction 16. A part ofthe index arms 144 c may be used when the substrate W is transferredfrom the process processing module 20 to the carrier 18, and anotherpart of the plurality of index arms 144 c may be used when the substrateW is transferred from the carrier 18 to the process processing module20. This may prevent particles generated from the substrate W before theprocess processing from being attached to the substrate W after theprocess processing in the process of loading and unloading the substrateW by the index robot 144.

The process module 20 includes a buffer unit 220, a transfer chamber240, and a process chamber 260.

The buffer unit 220 is disposed between the transfer frame 140 and thetransfer chamber 240. The buffer unit 220 provides a space in which thesubstrate W stays before the substrate W is transferred between thetransfer chamber 240 and the transfer frame 140. A slot (notillustrated) in which the substrate W is placed is provided inside thebuffer unit 220. A plurality of slots (not illustrated) is provided soas to be spaced apart from each other in the third direction 16. Thebuffer unit 220 has an open side facing the transfer frame 140. Thebuffer unit 220 has an open side facing the transfer chamber 240.

The transfer chamber 240 is disposed so that a longitudinal directionthereof is parallel to the first direction 12. The transfer chamber 240may include one side of the transfer chamber 240 and the other sidelocated opposite to the one side. The plurality of process chambers 260may be disposed on one side or the other side of the transfer chamber240. The plurality of process chambers 260 may be disposed on both sidesof the transfer chamber 240. The plurality of process chambers 260disposed on one side of the transfer chamber 240 and the plurality ofprocess chambers 260 disposed on the other side of the transfer chamber240 may be provided symmetrically with respect to the transfer chamber240. Some of the plurality of process chambers 260 may be disposed alongthe longitudinal direction of the transfer chamber 240. In addition,some of the plurality of process chambers 260 are disposed to be stackedon each other in the third direction 16. That is, on one side of thetransfer chamber 240, the process chambers 260 may be arranged in anarrangement of A ?B. Here, A is the number of process chambers 260provided in a line along the first direction 12, and B means the numberof process chambers 260 provided in a line along the third direction 16.For example, when four or six process chambers 260 are provided on oneside of the transfer chamber 240, the plurality of process chambers 260may be arranged in an arrangement of 2×2 or 3×2. The number of processchambers 260 may be increased or decreased. The number of processchambers 260 may be provided in various numbers according to a footprintor process efficiency. Unlike the above, the process chamber 260 may beprovided on only one side of the transfer chamber 240. In addition, theprocess chamber 260 may be provided as a single layer on one side andboth sides of the transfer chamber 240.

The transfer chamber 2400 transfers the substrate W between the bufferunit 2200 and the process chamber 260, and between the process chambers260. A guide rail 242 and a main robot 244 are provided to the transferchamber 240. The guide rail 242 is disposed so that its longitudinaldirection is parallel to the first direction 12. The main robot 244 isinstalled on the guide rail 242 and linearly moved along the firstdirection 12 on the guide rail 242. The main robot 244 includes a base244 a, a body 244 b, and a main arm 244 c. The base 244 a is installedto be movable along the guide rail 242. The body 244 b is coupled to thebase 244 a. The body 244 b is provided to be movable in the thirddirection 16 on the base 244 a. Further, the body 244 b is provided tobe rotatable on the base 244 a. The main arm 244 c is coupled to thebody 244 b, and provided to be movable forwardly and backwardly withrespect to the body 244 b. A plurality of main arms 244 c is provided tobe individually driven. The main arms 244 c are disposed to be stackedin the state of being spaced apart from each other in the thirddirection 16.

A substrate treating apparatus 300 performing a liquid processingprocess on the substrate W is provided to the process chamber 260. Thesubstrate treating apparatus 300 may have a different structuredepending on the type of liquid processing process to be performed.Contrary to this, the substrate treating apparatus 300 within eachprocess chamber 260 may have the same structure. Optionally, theplurality of process chambers 260 is divided into a plurality of groups,and the substrate treating apparatuses 300 within the process chambers260 belong to the same group may have the same structure, and thesubstrate treating apparatuses 300 within the process chambers 260belong to the different groups may have the different structures.

FIG. is a cross-sectional view illustrating a substrate treatingapparatus provided in a process chamber of FIG. 1 according to anexemplary embodiment of the present invention.

Referring to FIG. 2 , the substrate treating apparatus 300 includes aprocessing vessel 320, a substrate support unit 340, a lifting unit 360,a liquid supply unit 390, and a heating unit 500.

The substrate treating apparatus 300 may include a chamber 310. Thechamber 310 provides a sealed inner space. The processing vessel 320 isdisposed in the inner space of the chamber 310. A fan filter unit 315 isinstalled at the upper portion of the chamber 310. The fan filter unit315 generates a vertical airflow in the chamber 310. The fan filter unit315 generates a downward airflow in the chamber 310. The fan filter unit315 is a device in which a filter and an air supply fan are modularizedas one unit, and which filters high-humidity outdoor air and suppliesthe filtered air to the inside of the chamber 310. The high-humidityoutdoor air passes through the fan filter unit 315 and is supplied intothe chamber 310, and forms a vertical airflow in the inner space of thechamber 310. This vertical airflow provides a uniform airflow in theupper portion of the substrate W. Contaminants (for example, fumes)generated in the process of treating the substrate W are discharged tothe outside of the processing vessel 320 together with the air includedin the vertical airflow, and through this, the inside of the processingvessel 320 may maintain a high degree of cleanliness.

The treating vessel 320 has a cylindrical shape with an open top. Theprocessing vessel 320 includes a first recovery container 321 and asecond recovery container 322. The recovery containers 321 and 322recovers different processing liquids among the processing liquids usedfor the process. The first recovery container 321 is provided in anannular ring shape surrounding the substrate support unit 340. Thesecond recovery container 322 is provided in the shape of an annularring surrounding the substrate support unit 340. In one exemplaryembodiment, the first recovery container 321 is provided in an annularring shape surrounding the second recovery container 322. The secondrecovery container 322 may be provided by being inserted into the firstrecovery container 321. The height of the second recovery container 322may be higher than the height of the first recovery container 321. Thesecond recovery container 322 may include a first guard part 326 and asecond guard part 324. The first guard part 326 may be provided at thetop of the second recovery container 322. The first guard part 326 isformed to extend toward the substrate support unit 340, and the firstguard part 326 may be formed to be inclined upward toward the substratesupport unit 340. In the second recovery container 322, the second guardpart 324 may be provided at a position spaced downward from the firstguard part 326. The second guard part 324 is formed to extend toward thesubstrate support unit 340, and the second guard part 324 may be formedto be inclined upward toward the substrate support unit 340. The spacebetween the first guard part 326 and the second guard part 324 functionsas a first inlet 324 a through which the processing liquid flows. Asecond inlet 322 a is provided at a lower portion of the second guardpart 324. The first inlet 324 a and the second inlet 322 a may belocated at different heights. A hole (not illustrated) is formed in thesecond guard part 324 so that the processing liquid flowing into thefirst inlet 324 a flows into a second recovery line 322 b provided inthe lower portion of the second recovery container 322. A hole (notillustrated) of the second guard part 324 may be formed at a positionwith the lowest height in the second guard part 324. The processingliquid recovered to the first recovery container 321 is configured toflow into the first recovery line 321 b connected to the bottom surfaceof the first recovery container 321. The processing liquids introducedinto the recovery containers 321 and 322 may be provided to an externalprocessing liquid recycling system (not illustrated) through therecovery lines 321 b and 322 b, respectively, to be re-used.

The lifting unit 360 linearly moves the processing vessel 320 up anddown. As an example, the lifting unit 360 is coupled to the secondrecovery container 322 of the processing container 320 and moves thesecond recovery container 322 up and down, so that the relative heightof the processing vessel 320 with respect to the substrate support unit340 may be changed. The lifting unit 360 includes a bracket 362, amoving shaft 364, and a driver 366. The bracket 362 is fixedly installedon the outer wall of the processing vessel 320, and a moving shaft 364,which is moved in the vertical direction by the driver 366, is fixedlycoupled to the bracket 362. The second recovery container 322 of theprocessing vessel 320 is lowered so that the upper portion of thesubstrate support unit 340 protrudes toward the upper portion of theprocessing vessel 320, specifically, protrudes higher than the firstguard part 326 when the substrate W is loaded into the substrate supportunit 340 or unloaded from the substrate support unit 340. Further, whenthe process proceeds, the height of the treating vessel 320 is adjustedso that the processing liquid is introduced into the predeterminedrecovery container 321 and 322 depending on the type of the processingliquid supplied to the substrate W. Optionally, the lifting unit 360 mayalso move the substrate support unit 340 in the vertical directioninstead of the processing vessel 320. Optionally, the lifting unit 360may move the entire processing vessel 320 to be movable up and down inthe vertical direction. The lifting unit 360 is provided to adjust therelative heights of the processing vessel 320 and the substrate supportunit 340, and if it is a configuration capable of adjusting the relativeheights of the processing vessel 320 and the substrate support unit 340,exemplary embodiments of the processing vessel 320 and the lifting unit360 may be provided in various structures and methods depending on thedesign.

The liquid supply unit 390 is configured to discharge a chemical liquidfrom an upper portion of the substrate W to the substrate W, and mayinclude one or more chemical liquid discharge nozzles. The liquid supplyunit 390 may pump the chemical liquid stored in a storage tank (notillustrated) to discharge the chemical liquid to the substrate W throughthe chemical liquid discharge nozzle. The liquid supply unit 390 mayinclude a driving unit (not illustrated) to be movable between a processposition facing the central region of the substrate W and a standbyposition outside the substrate W.

The chemical liquid supplied from the liquid supply unit 390 to thesubstrate W may be various depending on the substrate treatment process.When the substrate treatment process is a silicon nitride film etchingprocess, the chemical liquid may be a chemical liquid includingphosphoric acid (H₃PO₄). The liquid supply unit 390 may further includea deionized water (DIW) supply nozzle for rinsing the surface of thesubstrate after the etching process, and an isopropyl alcohol (IPA)discharge nozzle and a nitrogen (N₂) discharge nozzle for performing adrying process after rinsing. Although not illustrated, the liquidsupply unit 390 may include a nozzle moving member (not illustrated)which is capable of supporting the chemical liquid discharge nozzle andmoving the chemical liquid discharge nozzle. The nozzle moving member(not illustrated) may include a support shaft (not illustrated), an arm(not illustrated), and a driver (not illustrated). The support shaft(not illustrated) is located at one side of the treating vessel 320. Thesupport shaft (not illustrated) has a rod shape of which a longitudinaldirection faces the third direction 16. The support shaft (notillustrated) is provided to be rotatable by the driver (notillustrated). The arm (not illustrated) is coupled to an upper end ofthe support shaft (not illustrated). The arm (not illustrated) may beextended vertically from the support shaft (not illustrated). Thechemical liquid discharge nozzle is fixedly coupled to the distal end ofthe arm (not illustrated). According to the rotation of the supportshaft (not illustrated), the chemical liquid discharge nozzle is capableof swing together with the arm (not illustrated). The chemical liquiddischarge nozzle may be swing-moved to move to the process position andthe standby position. Optionally, the support shaft (not illustrated)may be provided to be movable up and down. Further, the arm (notillustrated) may be provided to be movable forward and backward towardthe longitudinal direction thereof.

The substrate support unit 340 supports the substrate W and rotates thesubstrate W during the process progress. The substrate support unit 340includes a spin chuck 342, a window member 348, a rotation driver 349, achuck pin 346, and a chuck pin moving unit 400.

The chuck pin 346 is coupled to the spin chuck 342. The substrate W isspaced apart from the upper surface of the spin chuck 342 by the chuckpin 346 coupled to the spin chuck 342. The substrate W is rotatedtogether with the spin chuck 342 while being supported by the chuck pin346 coupled to the spin chuck 342.

The spin chuck 342 is provided in the shape of a tank having an open topand an open bottom. The spin chuck 342 includes a through-hole 342 apenetrating through the upper surface and the lower surface. The spinchuck 342 includes the through-hole 342 a penetrating in the verticaldirection. In this case, the vertical direction may refer to an axialdirection of the spin chuck 342 or a direction parallel to a rotationalaxis direction of the spin chuck 342. The heating unit 500 to bedescribed later is disposed in the through-hole 342 a.

The spin chuck 342 includes a body portion 3421 and an extension portion3422 extending upwardly from the body portion 3421. The body portion3421 and the extension portion 3422 are integrally formed. Thethrough-hole 342 a is formed to pass through both the body portion 3421and the extension portion 3422. The body portion 3421 is formed to havethe same area. The body portion 3421 is formed to have the same innerdiameter. The through-hole 342 a in the body portion 3421 is formed tohave the same diameter. The extension portion 3422 is formed togradually increase in area from the body portion 3421 in the upperdirection. The inner diameter of the extension portion 3422 is formed toincrease in the upper direction. The through-hole 342 a in the extensionportion 3422 is formed to increase in diameter in the upper direction.The heating unit 500 to be described later is disposed inside the body3421, and a laser beam generated from the heating unit 500 is emitted tothe substrate W through the extension portion 3422. The extension 3422may be formed in a size that does not interfere with the laser beam.Through this, the laser beam generated by the heating unit 500 may beemitted to the substrate W without being interfered by the spin chuck342.

The spin chuck 342 may be disposed under the window member 348. The spinchuck 342 may support the edge region of the window member 348. Aconnection part between the spin chuck 342 and the window member 348 mayhave a sealing structure so that the chemical liquid supplied to thesubstrate W does not penetrate into the heating unit 500.

The window member 348 is located under the substrate W. The windowmember 348 is provided under the substrate W supported on the chuck pin346. The window member 348 is provided under the substrate W supportedby the chuck pin 346. The window member 348 may be provided in a shapesubstantially corresponding to the substrate W. For example, when thesubstrate W is a circular wafer, the window member 348 may be providedin a substantially circular shape. The window member 348 may have alarger diameter than the substrate. However, the present invention isnot limited thereto, and the window member 348 may have the samediameter as that of the substrate W or may be formed to have a smallerdiameter than that of the substrate W.

A hole 3481 in which the chuck pin 346 is disposed is formed in thewindow member 348. The chuck pin 346 may pass through the hole 3481 ofthe window member 348. A diameter of the hole 3481 of the window member348 may be larger than a diameter of the chuck pin 346. Through this,the chuck pin 346 may move in the inside of the hole 3481 of the windowmember 348. At this time, the chuck pin 346 is moved in a directionperpendicular to the rotation axis direction of the spin chuck 342.

The window member 348 may be made of a material having high lighttransmittance. Accordingly, the laser beam emitted from the heating unit500 may pass through the window member 348. The window member 348 may bemade of a material having excellent corrosion resistance so as not toreact with the chemical liquid. For example, the window member 348 maybe provided of a material such as quartz, glass, or sapphire. The windowmember 348 is a configuration that allows the laser beam to pass throughand reaches the substrate W, and protects the configuration of thesubstrate support member 340 from a chemical liquid, and may be providedin various sizes and shapes according to design.

A support pin 347 may be coupled to the window member 348. A pluralityof support pins 347 may be provided. The support pin 347 may be providedin an edge region of the window member 348. The plurality of supportpins 347 may be disposed to be spaced apart from each other along theedge region of the window member 348. The support pin 347 may beprovided to protrude upwardly from the upper surface of the windowmember 348. The support pin 347 may support the lower surface of thesubstrate W to separate the substrate W from the window member 348.

The rotation driver 349 rotates the spin chuck 342. The rotation driver349 may be any one capable of rotating the spin chuck 342. As anexample, the rotation driver 349 may be provided as a hollow motor.According to the exemplary embodiment, the rotation driver 349 mayinclude a stator (not illustrated) and a rotor (not illustrated). Thestator may be provided fixed at one position, and the rotor may becoupled to the spin chuck 342. The rotor may be coupled to the bottom ofthe spin chuck 342 to rotate the spin chuck 342. When a hollow motor isused as the rotation driver 349, the narrower the bottom of the spinchuck 342 is provided, the smaller the hollow of the hollow motor may beselected. Accordingly, the manufacturing cost may be reduced. Accordingto the exemplary embodiment, a cover member (not illustrated) forprotecting the rotation driver 349 from the chemical liquid may befurther included.

The chuck pin 346 is installed on the spin chuck 342. The chuck pin 346may be provided on the spin chuck 346 so as to protrude from the uppersurface of the spin chuck 342. The chuck pin 346 may be installed in theextension portion 3422 of the spin chuck 342. The chuck pin 346 rotateswith the spin chuck 342. A plurality of chuck pins 346 may be provided.The plurality of chuck pins 346 may be spaced apart from each other. Theplurality of chuck pins 346 may be arranged in a circular shape whencombined. The plurality of chuck pins 346 may be provided along the edgeof the through hole 342 a formed in the extension portion 3422. Thechuck pin 346 supports the side portion of the substrate W. The chuckpin 346 grips the side portion of the substrate W. The chuck pin 3446separates the substrate W from the window member 348 by a predetermineddistance. At least a portion of the chuck pin 346 may be received in thehole 3481 of the window member 348. The chuck pin 346 may be provided tobe movable within the hole 3481 of the window member 348. The chuck pin346 may be coupled to the chuck pin moving unit 400 to be describedlater. The chuck pin 346 may be movably provided by the chuck pin movingunit 400. The chuck pin 342 may be provided to be movable between acontact position at which the chuck pin is in contact with the side ofthe substrate W and an open position at which the chuck pin 342 isspaced apart from the side of the substrate W.

FIG. 3 is a cross-sectional view illustrating a chuck pin and a chuckpin moving unit according to the exemplary embodiment of the presentinvention, FIG. 4 is a plan cross-sectional view illustrating a state inwhich an impact mitigating member is installed on a first clutchaccording to the exemplary embodiment of the present invention, FIG. 5is a diagram schematically illustrating a state in which an elasticmember of a lifting driver is installed according to the exemplaryembodiment of the present invention, and FIG. 6 is a cross-sectionalview illustrating a second clutch module according to the exemplaryembodiment of the present invention.

The chuck pin moving unit 400 moves the chuck pin 346. The chuck pinmoving unit 400 is coupled to one end of the chuck pin 346 to move thechuck pin 346. The chuck pin moving unit 400 moves the chuck pin 346 ina direction perpendicular to the rotation axis direction of the spinchuck 342. The chuck pin moving unit 400 moves the chuck pin 346 to movebetween the contact position at which the chuck pin 342 is in contactwith the side portion of the substrate W and the open position at whichthe chuck pin 342 is spaced apart from the side portion of the substrateW. The chuck pin moving unit 400 moves the chuck pin 342 while the spinchuck 342 is being rotated. The chuck pin moving unit 400 may beprovided to electrically move the chuck pin 346 of the rotating spinchuck 342 at normal times.

Referring to FIG. 3 , the chuck pin moving unit 400 includes a firstclutch module 420 and a second clutch module 440. The first clutchmodule 420 may face the second clutch module 440. At least a portion ofthe first clutch module 420 may face the second clutch module. The firstclutch module 420 may be provided to be movable in the verticaldirection. The first clutch module 420 may be moved in an upwarddirection to come into contact with the first clutch module 440. Whenthe first clutch module 420 comes into contact with the second clutchmodule 440, the chuck pin 346 may be moved to the open position. Thefirst clutch module 420 may be moved in a descending direction to bespaced apart from the second clutch module 440. When the first clutchmodule 420 is spaced apart from the second clutch module 440, the chuckpin 346 may be moved to the contact position.

The first clutch module 420 may include a first clutch 421, a fixingmember 422, and a bearing member 423.

The first clutch 421 faces the second clutch 441 to be described later.At least a portion of the first clutch 421 faces the second clutch 441.The first clutch 421 is provided to be movable in the verticaldirection. The first clutch 421 may be moved in the vertical directionby the lifting driver 430. The first clutch 421 may be moved in anupward direction to come into contact with the second clutch 441. Inthis case, the chuck pin 346 is moved to the open position. The firstclutch 421 may be moved in the descending direction to be spaced apartfrom the second clutch 441. In this case, the chuck pin 346 is moved tothe contact position. The first clutch 421 is rotatably provided. Thefirst clutch 421 does not rotate when the first clutch 421 is spacedapart from the second clutch 441. The first clutch 421 rotates togetherwith the second clutch 441 when the first clutch 421 is in contact withthe second clutch 441. The first clutch 421 is rotated together with thespin chuck 342 when the first clutch 421 is in contact with the secondclutch 441.

Referring to FIG. 4 , the first clutch 421 may include an impactmitigating member 4211. The impact mitigating member 4211 may beinstalled on the first clutch 421. The impact mitigating member 4211 maybe built into the first clutch 421. A plurality of impact mitigatingmembers 4211 may be provided. The plurality of impact mitigating members4211 may be provided to be spaced apart from each other along the outercircumference of the first clutch 421. The impact mitigating member 4211may be provided as an elastic member. The impact mitigating member 4211may be compressed in a rotational direction of the first clutch 421 whenthe first clutch 421 is rotated. Through this, the rotational impactforce generated when the first clutch 421 is rotated while being incontact with the second clutch 441 may be alleviated.

The fixing member 422 does not rotate together with the spin chuck 342.The fixing member 422 is provided to be fixed with respect to therotating spin chuck 342. The fixing member 422 is provided so as not tobe in contact with the spin chuck 342. The fixing member 422 is disposedat a position spaced apart from the outer surface of the spin chuck 342.The fixing member 422 is provided to surround the spin chuck 342. Forexample, the fixing member 422 may be provided in a ring shapesurrounding the spin chuck 342. An inner diameter of the fixing member422 may be greater than an outer diameter of the spin chuck 342. Aninner surface of the fixing member 422 faces at least a portion of anouter surface of the spin chuck 342. In this case, the inner diameter ofthe fixing member 422 may be larger than the outer diameter of theportion of the spin chuck 342 facing the inner surface of the fixingmember 442.

The fixing member 422 does not rotate together with the first clutch421. The fixing member 422 is provided to be fixed with respect to thefirst clutch 421 when the first clutch 421 rotates together with thesecond clutch 441. The fixing member 442 supports the first clutch 421.

The bearing member 423 is provided between the first clutch 421 and thefixing member 422. The bearing member 423 may be provided as a rollerbearing, a cross roller bearing, or a ball bearing. The bearing member423 may include an outer ring 4231, an inner ring 4232, and a ball 4233.The outer ring 4231 is coupled to the fixing member 422. The inner ring4232 is coupled to the first clutch 421. The ball 4233 is rotatablyprovided between the outer ring 4231 and the inner ring 4232. The outerring 4231 is coupled to the fixing member 422 so as not to rotate. Theouter ring 4231 is provided to be fixed with respect to the rotatingspin chuck 342. The outer ring 4231 is provided to be fixed with respectto the first clutch 421 when the first clutch 421 rotates. The innerring 4232 is provided to rotate together with the first clutch 421 whenthe first clutch 421 rotates. The inner ring 4232 is provided not torotate when the first clutch 421 does not rotate. The ball 4233 mayreduce friction caused by rotation when the inner ring 4232 rotatestogether with the first clutch 421. A plurality of balls 4233 may beprovided. The plurality of balls 4233 may be provided to be spaced apartfrom each other in a space between the outer ring 4231 and the innerring 4232.

The chuck pin moving unit 400 includes the lifting driver 430. Thelifting driver 430 moves the first clutch module 420 in the verticaldirection. The lifting driver 430 moves the first clutch 421, the fixingmember 422, and the bearing member 423 in the vertical direction. Thelifting driver 430 provides driving force so that the first clutch 421,the fixing member 422, and the bearing member 423 are movable in thevertical direction. For example, the lifting driver 430 may be providedas a motor or a cylinder.

The lifting driver 430 may overlap a non-rotating portion of the firstclutch module 420 in the direction of the rotation axis of the spinchuck 342. For example, the lifting driver 430 may overlap the fixingmember 422 or the outer ring 4231 of the first clutch module 420 in therotation axis direction of the spin chuck 342. The lifting driver 430may overlap the fixing member 422 and the outer ring 4231 in therotation axis direction of the spin chuck 342. The lifting driver 430may overlap an intermediate point between the fixing member 422 and theouter ring 4231 in the direction of the rotation axis of the spin chuck342.

Referring to FIG. 5 , when the lifting driver 430 is provided as acylinder, the lifting actuator 430 may include an elastic member 432.The elastic member 432 is provided between the first clutch module 420and the lifting driver 430. The elastic member 432 may be compressedwhen the first clutch module 420 is in contact with the second clutchmodule 440 to alleviate the impact. A plurality of elastic members 432may be provided. A plurality of elastic members 432 may be provided onboth sides based on the center of the lifting driver 430. Through this,when the first clutch module 420 rises and comes into contact with thesecond clutch module 440, even when the first clutch module 420 is nothorizontal to the second clutch module 440, the first clutch module 420and the second clutch module 440 may be aligned in the horizontal stateby the elastic members 432 provided on both sides of the lifting driver430.

The second clutch module 440 is provided above the first clutch module420. The second clutch module 440 is vertically spaced apart from thefirst clutch module 420. The second clutch module 440 is rotatedtogether with the spin chuck 342. The second clutch module 440 iscoupled to the chuck pin 346.

The second clutch module 440 includes a second clutch 441, a base member442, a first moving member 443, a second moving member 444, and a thirdmoving member 445.

The second clutch 441 faces the first clutch 421. When the first clutch421 rises, the second clutch 441 comes into contact with the firstclutch 421. The second clutch 441 may move upward while being in contactwith the first clutch 421. The second clutch 441 includes a plateportion 4412 facing the first clutch 421 and a pillar portion 4414extending upwardly from the plate 4412. The plate 4412 is in contactwith the first clutch 421. The pillar portion 4414 is provided to have adirect diameter smaller than the diameter of the plate portion 4412. Oneend of the pillar portion 4414 is coupled to the plate portion 4412, andthe other end of the pillar portion 4414 is coupled to a first movingmember 443 to be described later.

The base member 442 is coupled to the spin chuck 342. The base member442 guides the movement of the chuck pin 346. The base member 442 guidesmovement of first and second moving members 443 and 444 to be describedlater. The base member 42 includes a first portion 4422 having alongitudinal direction corresponding to the movement direction (up anddown direction) of the first clutch 421, and a second portion 4424extending from the first portion 4422 and extending in a directionperpendicular to the longitudinal direction of the first portion 4422.

The first moving member 443 is coupled to the base member 442. The firstmoving member 443 is coupled to the first portion 4422 of the basemember 442. The first moving member 443 is movably coupled to the firstportion 4422 of the base member 442. The longitudinal direction of thefirst moving member 443 corresponds to the longitudinal direction of thefirst portion 4422 of the base member 442. The first moving member 443is provided movably on the first portion 4422 of the base member 442.The movement direction of the first moving member 443 may be parallel tothe longitudinal direction of the first portion 4422 of the base member442. The first moving member 443 is coupled to the second clutch 441.The first moving member 443 is coupled to the pillar portion 4414 of thesecond clutch 441. When the second clutch 441 is raised while being incontact with the first clutch 421, the first moving member 443 is movedupwardly together with the second clutch 441. At this time, the firstmoving member 443 is raised along the first portion 4422 of the basemember 442.

The second moving member 444 is coupled to the chuck pin 346. The secondmoving member 444 is coupled to the base member 442. The second movingmember 444 is coupled to the second portion 4424 of the base member 442.The second moving member 444 is movably coupled to the second portion4424 of the base member 442. The second moving member 444 has alongitudinal direction corresponding to the second portion 4424 of thebase member 442. The second moving member 444 is provided movably on thesecond portion 4424 of the base member 442. When the second clutch 441is raised in a state of being in contact with the first clutch 421, thesecond moving unit 444 moves away from the axis of rotation of the spinchuck 342 by the third moving member 445 to be described later. In thiscase, the chuck pin 346 coupled to the second moving member 444 is movedto the open position.

One end of the third moving member 445 may be coupled to the firstmoving member 443, and the other end may be coupled to the second movingmember 444. One end of the third moving member 445 may be hinged to thefirst moving member 443, and the other end may be hinged to the secondmoving member 444. Hereinafter, a portion in which the third movingmember 445 is hinged to the first moving member 443 is referred to as afirst hinge portion, and a portion in which the third moving member 445is hinged to the second moving member 444 is referred to as a secondhinge portion. The third moving member 445 is rotated at the first hingeportion and the second hinge portion when the first moving member 443 ismoved upwardly. The first hinge portion of the third moving member 445is raised together with the upward movement of the first moving member443, and the second hinge portion of the third moving member 445 ismoved together with the second moving member 444 in a direction awayfrom the rotation axis of the spin chuck 342. In this case, the chuckpin 346 is moved to the open position.

Referring to FIG. 6 , a partition wall P may be disposed between thefirst clutch module 420 and the second clutch module 440. The secondclutch 441 may be located between the partition wall P and the firstclutch module 420. The plate portion 4412 of the second clutch 441 maybe located between the partition wall P and the first clutch module 420.A movement range of the first clutch module 420 or the second clutch 441in the upward direction may be limited by the partition wall P. A holethrough which the pillar portion 4414 of the second clutch 441 passesmay be formed in the partition wall P. The diameter of the hole of thepartition wall P may be the same as the diameter of the pillar portion4414 or may be provided to be larger than the diameter of the pillarportion 4414. A sealing member S may be provided between the innersurface of the hole of the partition wall P and the pillar portion ofthe second clutch. The sealing member S may be provided as an O-ring.Through the sealing member S, the processing liquid supplied to thesubstrate W may be prevented from flowing to the first clutch module 420or the lifting driver 430.

FIG. 7 is a diagram schematically illustrating a state in which thechuck pin is provided movably between the contact position and the openposition while the substrate is being rotated according to the exemplaryembodiment of the present invention, FIG. 8 is a diagram illustrating astate of the chuck pin moving unit when the chuck pin is located at theopen position according to the exemplary embodiment of the presentinvention, and FIG. 9 is a view illustrating a state of the chuck pinmoving unit when the chuck pin is located at the contact positionaccording to the exemplary embodiment of the present invention.

Referring to FIG. 7 , the chuck pin moving unit 400 may move the chuckpin 346 while the spin chuck 342 or the substrate W is being rotated.The chuck pin moving unit 400 may move the chuck pin 346 between theopen position and the contact position while the spin chuck 342 or thesubstrate W is being rotated. The chuck pin moving unit 400 may alwaysmove the chuck pin 346 even though the spin chuck 342 or the substrate Wdoes not stop.

Referring to FIGS. 8 and 9 , the spin chuck 342 rotates the substrate Wat a first speed v1 or a second speed v2 faster than the first speed v1.Referring to FIG. 8 , the chuck pin moving unit 400 moves the chuck pin346 so that the chuck pin 346 is located at the open position while thesubstrate W is being rotated at the first speed v1. In this case, thefirst clutch module 420 is moved in the upward direction by the liftingdriver 430. The first clutch 421 comes into contact with the secondclutch 441 as the first clutch 421 moves in the upward direction. Thefirst clutch 421 and the second clutch 441 are continuously moved upwardby the lifting driver 430 in a contact state. The first clutch 421 andthe second clutch 441 are moved upwardly by the lifting driver 430 inthe contact state, and are provided to be movable only up to theposition of the partition wall P. When the second clutch 441 movesupwardly, the first moving member 443 coupled to the second clutch 441moves upwardly along the first portion 4422 of the base member 442. Whenthe first moving member 443 moves upwardly, the first hinge portion ofthe third moving member 445 is raised together with the first movingmember 443, and accordingly, the second hinge portion of the thirdmoving member 445 moves the second moving member 444 in a direction awayfrom the rotation axis of the spin chuck 342. The second moving member444 is pushed in the direction away from the rotation axis of the spinchuck 342 by the third moving member 445, and accordingly, the chuck pin346 coupled to the second moving member 444 is also moved to the openposition.

Referring to FIG. 9 , the chuck pin moving unit 400 moves the chuck pin346 so that the chuck pin 346 is located at the contact position whilethe substrate W is being rotated at the second speed v2. In this case,the first clutch module 420 is moved in the descending direction by thelifting driver 430. The first clutch 421 is spaced apart from the secondclutch 441 as the first clutch 421 moves in the descending direction.When the second clutch 441 is lowered, the first moving member 443coupled to the second clutch 441 is moved down along the first portion4422 of the base member 442 When the first moving member 443 is moveddownwardly, the first hinge portion of the third moving member 445 islowered together with the first moving member 443, and accordingly, thesecond hinge portion of the third moving member 445 moves the secondmoving member 444 in a direction closer to the rotation axis of the spinchuck 342. The second moving member 444 is pushed in the directioncloser to the rotation axis of the spin chuck 342 by the third movingmember 445, and accordingly, the chuck pin 346 coupled to the secondmoving member 444 is moved to the contact position to grip the sideportion of the substrate W.

Referring back to FIG. 2 , the substrate treating apparatus 300 includesa heating unit 500. The heating unit 500 is a configuration for emittinga laser beam to the substrate W. The heating unit 500 may be located ata lower surface than the window member 348 in the substrate support unit340. The heating unit 500 may emit a laser beam toward the substrate Wlocated on the substrate support unit 340. The laser beam emitted fromthe heating unit 500 may pass through the window member 348 of thesubstrate support unit 340 to be emitted onto the substrate W.Accordingly, the substrate W may be heated to a set temperature. Theheating unit 500 may include a laser beam generating member (notillustrated), a laser beam emitting member 500, and a laser beamtransmitting member. The laser beam generating member (not illustrated)may be disposed outside the chamber 310. The laser beam emitting member500 may include, for example, a lens. The laser beam emitting member 500may include a plurality of lenses. The laser beam emitting member 500may be provided inside the spin chuck 342. The laser beam emittingmember may be provided as a line connecting the laser beam generatingmember (not illustrated) and the laser beam emitting member 500. Thelaser beam transmitting member may transmit the laser beam generatedfrom the laser beam generating member (not illustrated) to the laserbeam emitting member 500. The laser beam emitting member 500 receivingthe laser beam by the laser beam transmitting member may emit the laserbeam to the substrate W. In the above, the heating unit 500 has beendescribed as a configuration for emitting a laser beam, but the presentinvention is not limited thereto, and the heating unit 500 may beprovided as a variety of heat sources capable of heating the substrateW. For example, the heating unit 500 may be provided as an LED or ahalogen heater.

Hereinafter, a process in which the chuck pin 346 is moved by the chuckpin moving unit 400 will be described in detail with reference to thedrawings.

Hereinafter, a substrate treating method according to an exemplaryembodiment of the present invention will be described with reference toFIGS. 10 to 14 . FIG. 10 is a flowchart of a substrate treating methodaccording to an exemplary embodiment of the present invention, and FIGS.11 to 14 are diagrams sequentially illustrating the substrate treatingmethod of FIG. 10 .

Referring to FIG. 10 , the substrate treating method according to theexemplary embodiment of the present invention includes a substratealignment operation S100, a first liquid supply operation S200, a liquidfilm heating operation S300, and a second liquid supply operation S400.

FIG. 11 is a diagram illustrating a substrate alignment operation beforestarting a process according to the substrate treating method accordingto the exemplary embodiment of the present invention. Referring to FIG.11 , before the process starts, the substrate W is transferred to thesubstrate support unit 340. After the substrate W is transferred to theupper portion of the spin chuck 342, the center of the substrate W isaligned with the center of the spin chuck 342 or the window member 348.In this case, the chuck pin 346 is located at the open position. Whenthe center of the substrate W and the center of the spin chuck 342 orthe window member 348 are aligned, the chuck pin 346 is moved to thecontact position to support the side portion of the substrate W. In thiscase, the chuck pin 346 is moved by the chuck pin moving unit 400.

FIG. 12 illustrates a process of forming a processing liquid puddle onthe substrate according to the substrate treating method according tothe exemplary embodiment of the present invention. Referring to FIG. 12, in a state in which the substrate W is supported by the chuck pin 346of the substrate support unit 340, the spin chuck 342 rotates thesubstrate W at a first speed v1. The liquid supply unit 390 forms afirst liquid film C1 on the upper surface of the substrate W bysupplying a first liquid to the substrate W rotating at the first speedv1. The first liquid film C1 may be a puddle having a predeterminedthickness. When the first liquid is supplied to the substrate W, thechuck pin 346 is located at the open position. That is, the first liquidfilm C1 is formed by supplying the first liquid to the substrate Wrotating at the first speed v1 in a state in which the chuck pin 346 islocated at the open position at which the chuck pin 346 is spaced apartfrom the side portion of the substrate W. When the chuck pin 346 islocated at the contact position at which the chuck pin 346 is in contactwith the side portion of the substrate W when the first liquid film C1is formed, the first liquid flows down the chuck pin 346, so that thereis a problem in that it is difficult to maintain a certain amount of theliquid film. However, according to the substrate treating methodaccording to the exemplary embodiment of the present invention, when thefirst liquid film C1 is formed, the first liquid film C1 is formed inthe state in which the chuck pin 346 is located at the open position atwhich the chuck pin 346 is spaced apart from the side portion of thesubstrate W, so that it is possible to prevent the first liquid fromflowing down, thereby maintaining a certain amount of liquid film. Inaddition, as the chuck pin 346 is spaced apart from the side portion ofthe substrate W, there is an advantage in that the first liquid film(puddle) may be easily formed by the surface tension of the first liquidfilm C1.

FIG. 13 is a diagram illustrating a operation of heating the firstliquid film according to the substrate treating method according to theexemplary embodiment of the present invention. Referring to FIG. 13 ,when the first liquid film C1 having a predetermined thickness isformed, the rotation of the substrate W is stopped and the supply of thefirst liquid from the liquid supply unit 390 is stopped. As a result,the surface of the substrate W is covered with the first liquid film C(formation of a puddle of the processing liquid). Here, the treatmentliquid may be provided as an aqueous solution of phosphoric acid. Thesubstrate W and the first liquid film C1 are heated to a temperaturesuitable for treating the substrate W. The substrate W and the firstliquid film C1 may be heated by the heating unit 500. At this time, thechuck pin 346 is located at the open position.

As a heat source of the eating unit 500, any one of a laser, an LED, anda halogen heater may be provided. By maintaining the state in which thesurface of the substrate W is covered with the first liquid film C1 ofthe heated processing liquid for a predetermined period of time, thetreatment of the substrate W (for example, etching processing (wetetching process)) is performed. At this time, the spin chuck 342 rotatesthe substrate W at the first speed v1. The first liquid may be stirredon the substrate W by rotating the substrate W about half rotation inthe forward rotation and reverse rotation direction. Thereby, etching isfacilitated, and the in-plane uniformity of etching amount may beimproved.

FIG. 14 is a diagram illustrating the second liquid supply operationaccording to the exemplary embodiment of the present invention.Referring to FIG. 14 , after the first liquid film C1 is heated, asecond liquid is supplied to the substrate W to form a second liquidfilm C2. At this time, the spin chuck 346 rotates the substrate W at thesecond speed v2. In addition, the chuck pin moving unit 400 moves thechuck pin 346 to the contact position in which the chuck pin 346 is incontact with the side portion of the substrate W. The second liquid maybe provided in the same liquid as the first liquid. The second liquidmay be provided as an aqueous solution of phosphoric acid. The thicknessof the second liquid film C2 may be thinner than the thickness of thefirst liquid film C1. The second speed v2 may be faster than the firstspeed v1. For example, the rotation at the first speed v1 may be alow-speed rotation, and the rotation at the second speed v2 may be ahigh-speed rotation. For example, the first speed v1 may be 20 RPM orless.

The substrate treatment according to FIGS. 12 to 14 may be repeatedlyperformed a plurality of times. When the substrate treatment accordingto FIGS. 11 to 14 is finished, rinse processing (rinse process) ofsupplying a rinse liquid to the substrate W to remove by-productsgenerated by reaction with the processing liquid from the surface of thesubstrate W is performed. The rinse solution may be pure water (DIW).

According to the substrate treating method according to the exemplaryembodiment of the present invention, in the first liquid supplyoperation and the liquid film heating operation, the chuck pin 346 ismoved so that the chuck pin 346 is located at the open position, and inthe second liquid supply operation, the chuck pin 346 is moved so thatthe chuck pin 346 is located at the contact position. At this time,according to the general spin chuck structure of moving the chuck pinbetween the open position and the contact position by using a rotarycylinder that can rotate 90 degrees, the chuck pin is movable only whenthe spin chuck is stopped. Therefore, when the spin chuck has to bestopped and the chuck pin has to be moved whenever each operation of thesubstrate treating method is performed, the process takes a long timeand the process efficiency is degraded, and when the spin chuck isstopped for the stop of the spin chuck and the movement of the chuck pinat each process operation, a liquid film having a uniform thickness maynot be obtained, or the liquid film may be excessively hardened, causingthe liquid film to break. In addition, when the treatment the substrateprogresses in a state in which the chuck pin is in contact with the sideportion of the substrate without stopping the spin chuck at eachoperation of the substrate treating method in the spin chuck structurein the related art, as described above, there are problems in that theliquid film flows along the surface of the chuck pin and thus a certainamount of liquid film cannot be formed, and since the surface tension ofthe liquid film is reduced by the contact area between the chuck pin andthe side portion of the substrate, it is difficult to form a liquid filmof a certain thickness.

However, according to the exemplary embodiment of the present invention,by providing the structure in which the chuck pin 346 of the rotatingspin chuck 342 can be opened and closed at all times by using the clutchmodule, which is a mechanical device, it is possible to move the chuckpin 346 even while the spin chuck 342 is being rotated, thereby solvingthe aforementioned problems.

Meanwhile, the substrate treating apparatus and the substrate treatingmethod according to the above-described exemplary embodiments may becontrolled and performed by a controller (not illustrated).Configuration, storage and management of the controller may be realizedin the form of hardware, software, or a combination of hardware andsoftware. The file data and/or the software configuring the controllermay be stored in volatile or non-volatile storage devices, such as ReadOnly Memory (ROM); or memory, such as, for example, Random Access Memory(RAM), memory chips, devices, or integrated circuits, or a storagemedium, such as Compact Disk (CD), Digital Versatile Disc (DVD),magnetic disk, or magnetic tape, which are optically or magneticallyrecordable and simultaneously machine (for example, computer)-readable.

The foregoing detailed description illustrates the present invention. Inaddition, the foregoing is intended to describe exemplary or variousexemplary embodiments for implementing the technical spirit of thepresent invention, and the present invention may be used in variousother combinations, changes, and environments. That is, the foregoingcontent may be modified or corrected within the scope of the concept ofthe invention disclosed in the present specification, the scopeequivalent to that of the disclosure, and/or the scope of the skill orknowledge in the art. Accordingly, the detailed description of theinvention above is not intended to limit the invention to the disclosedexemplary embodiment. In addition, the appended claims should beconstrued to include other exemplary embodiments as well. Such modifiedexemplary embodiments should not be separately understood from thetechnical spirit or prospects of the present invention.

1. An apparatus for treating a substrate, the apparatus comprising: aprocessing vessel having a processing space; a support unit forsupporting the substrate in the processing space and rotating thesubstrate; a liquid supply unit for supplying a processing liquid to thesubstrate supported by the support unit; and a heating unit for heatingthe substrate, wherein the support unit includes: a spin chuck; arotation driver for rotating the spin chuck; a chuck pin installed onthe spin chuck so as to be rotated together with the spin chuck; and achuck pin moving unit for moving the chuck pin between a contactposition at which the chuck pin is in contact with a side portion of thesubstrate and an open position at which the chuck pin is spaced apartfrom the side portion of the substrate, and the chuck pin moving unitmoves the chuck pin while the substrate is being rotated by the spinchuck.
 2. The apparatus of claim 1, wherein the chuck pin moving unitincludes: a first clutch module including a first clutch provided to bemovable in a vertical direction by a lifting driver; and a second clutchmodule including a second clutch facing the first clutch and coupled tothe chuck pin.
 3. The apparatus of claim 2, wherein when the firstclutch is in contact with the second clutch, the chuck pin is moved fromthe contact position to the open position.
 4. The apparatus of claim 2,wherein when the first clutch is spaced apart from the second clutch,the chuck pin is located at the contact position.
 5. The apparatus ofclaim 2, wherein the second clutch module is rotated together with thespin chuck.
 6. The apparatus of claim 2, wherein when the first clutchcomes into contact with the second clutch, the first clutch is rotatedtogether with the second clutch.
 7. The apparatus of claim 2, whereinthe first clutch module includes: the first clutch; a fixing memberwhich is not rotated together with the spin chuck; and a bearing memberdisposed between the first clutch and the fixing member.
 8. Theapparatus of claim 7, wherein the bearing member includes an outer ringcoupled to the fixing member, an inner ring coupled to the first clutch,and a ball disposed between the outer ring and the inner ring, and whenthe first clutch is in contact with the second clutch, the first clutchis rotated together with the second clutch with respect to the fixingmember.
 9. The apparatus of claim 7, wherein an elastic member isprovided between the lifting driver and the first clutch.
 10. Theapparatus of claim 6, wherein an impact mitigating member is disposedinside the first clutch, and the impact mitigating member mitigates animpact generated in a rotational direction of the first clutch when thefirst clutch is in contact with the second clutch and is rotatedtogether with the second clutch.
 11. The apparatus of claim 2, whereinthe second clutch module includes: the second clutch; a base memberincluding a first portion having a longitudinal direction correspondingto the vertical direction, and a second portion extending from the firstportion and extending in a direction perpendicular to the longitudinaldirection of the first portion; a first moving member movably coupled tothe first portion of the base member; a second moving member coupled tothe chuck pin and movably coupled to the second portion of the basemember; and a third moving member having one end hinged to the firstmoving member and the other end hinged to the second moving member, andthe second clutch is coupled to the first moving member.
 12. Theapparatus of claim 11, wherein the second clutch includes: a plateportion facing the first clutch; and a pillar portion for connecting theplate and the first moving member.
 13. The apparatus of claim 12,wherein a partition wall is disposed between the first clutch module andthe second clutch module, and the second clutch is located between thepartition wall and the first clutch.
 14. The apparatus of claim 13,wherein a hole through which the pillar portion of the second clutchpasses is formed in the partition wall, and a sealing member is providedbetween an inner surface of the hole of the partition wall and thepillar portion of the second clutch.
 15. The apparatus of claim 3,wherein the spin chuck is rotated such that the substrate is rotated ata first speed or a second speed faster than the first speed, when thesubstrate is rotated at the first speed, the first clutch is in contactwith the second clutch, and when the substrate is rotated at the secondspeed, the first clutch is spaced apart from the second clutch. 16-20.(canceled)